GALLIUM ARSENIDE VARACTOR DIODES
Abstract
Emphasis was placed on the fabrication of diodes with breakdown voltages in excess of 20 volts. Devices were made using both epitaxial and melt grown material. The change in material characteristics which occur during diffusion were investigated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 30, 1963
- Accession Number
- AD0403291
Entities
People
- G. A. Kupsky
- H. Kressel