INTEGRATED SILICON DEVICE TECHNOLOGY. VOLUME I RESISTANCE

Abstract

Conventional and unconventional methods of achieving the resistive function in integrated silicon devices are discussed. The properties and types of resistors made of silicon are considered in some detail as well as general design procedures. Many charts and graphs are reproduced in the hope of providing a convenient source of information pertinent to the design of resistors for integrated silicon devices. The more recent trend toward combining thin film passive components on a silicon substrate containing the active elements is discussed in less detail, not because this technique is felt to be less important but because information is sparse on such devices and their fabrication.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1963
Accession Number
AD0408961

Entities

People

  • While R. Donovan

Organizations

  • RTI International

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Conduction Bands
  • Crystal Structure
  • Electric Fields
  • Electrical Properties
  • Electromagnetic Fields
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Energy Gaps
  • Energy Levels
  • Field Effect Transistors
  • Materials
  • Modules (Electronics)
  • Oxide Films
  • Semiconductors
  • Two Dimensional

Readers

  • Business Analytics
  • Integrated Circuit Design and Technology.
  • Systems Analysis and Design