Thin Films Formed by Electrochemical Reactions

Abstract

The technique of forming thin-film capacitors by the anodic oxidation of the surfaces of vacuum deposited films of aluminum, tantalum, tungsten, titanium and zirconium has been investigated. Breakdown voltages equal to or greater than the anodization forming voltage have been obtained, resulting in a usable capacitance voltage product of 13.5 microfarad v/sq cm. The uniformity of capacitance measured for a large number of test samples fell within a standard deviation of 3 percent. Electrical properties over a range of frequency and tempera ture have been evaluated. The preparation of thin-film resistors by forming vacuum-deposited metal in a predetermined pattern and then partially anodizing the deposited metal to a precise resistance has been studied for tantalum and tungsten. The properties of vacuum-deposited films of titanium and zirconium that are related to their use as resistors has also been investigated.

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Document Details

Document Type
Technical Report
Publication Date
Jan 31, 1963
Accession Number
AD0409422

Entities

People

  • E. R. Bowerman
  • J. W. Culp
  • P. F. Hudock

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Anodizing
  • Capacitors
  • Chemistry
  • Electrical Measurement
  • Electrical Properties
  • Film Resistors
  • Materials
  • Materials Processing
  • Measurement
  • Oxide Films
  • Oxides
  • Photoelectrochemical Cells
  • Resistors
  • Temperature Coefficients
  • Thin Film Capacitors
  • Thin Film Resistors
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Metallurgy
  • Superconducting Magnet Technology