HALL EFFECT INVESTIGATIONS

Abstract

The properties of Cu-doped p-type films of InSb on pyrex substrates are described in terms of the two-band charge carrier model applied to bulk crystalline InSb. The calculated virtual mobili ty ratio is shown to be of the order of 32, which is in fair agreement with values expected from the polycrystalline material. Data from present and past experiments on annealing and recrystalli zation of vacuum-deposited films are in agreement.

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Document Details

Document Type
Technical Report
Publication Date
May 15, 1963
Accession Number
AD0410115

Entities

People

  • A. R. Clawson
  • H. H. Wieder

Organizations

  • Naval Ordnance Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Annealing
  • Charge Carriers
  • Conductivity
  • Electron Mobility
  • Electrons
  • Equations
  • Evaporation
  • Films
  • Government Procurement
  • Hall Effect
  • Magnetic Fields
  • Materials
  • Mobility
  • Naval Shore Facilities
  • Navy
  • Ordnance Laboratories
  • Recrystallization

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Snow Cover Descriptors for Reptiles and Their Illustrations.
  • Thin Film Deposition Science.