PRODUCTION ENGINEERING MEASURES TO INCREASE TRANSISTOR RELIABILITY
Abstract
The process improvement work on the 2N656 device has been completed. Thermal resistance measurements indicate a power dissipation capability of 15 watts at 100 C case temperature. The Planar device improvements include 'hard' gold alloy wafer mounting, ultrasonically cold-bonded contacts, and an improved slug package. Varnishes and organics have been completely eliminated from the inside of the package. Purity of the encapsulated atmosphere is assured by a through cleaning and baking of all parts and by rigid control of the assembly and canning dry-box atmosphere. The aluminum wafer contacts are never exposed to etchants. Corrosive chemicals have been eliminated from the assembly process. Improved processes in the diffusion, photo resist, etch, evaporation and plating areas have contributed to significantly increased product yields, quality and uniformity. These process improvements have not only upgraded the 2N656, but also made possible the EIA reservation of a new device series, 2N2987 to 2N2994 - rated at 25 nanoamperes maximum 1 sub CEX at 150% of rated BV sub CEO. Saturation properties and current-carrying capabilities have been sufficiently improved such that V sub BE and V sub CE(sat) are specified at a collector current of 500 milliamperes as compared to the 200 milliampere rating of the Mesa 2N656.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1963
- Accession Number
- AD0433496
Entities
People
- Clarence Muncil
- Dale Bennett
- Edmond Mcghee
- Herbert Locke
- Milton Mack
Organizations
- Texas Instruments