STUDY OF NOISE IN SEMICONDUCTOR DEVICES
Abstract
Equipment has been designed for measuring noise in FET's at low temperatures under pulsed conditions to avoid heating effects. Equipment is being designed for transistor noise measurements at v.h.f. and microwave frequencies. Preparatory studies of noise in GaAs lasers are continuing. The l/f noise at 1000 cycles was measured for various transistors as a function of temperature. Also noise measurements are being made on transistors that are life-tested at elevated temperatures. Noise in unijunction transistors can to a certain extent be interpreted as being caused by drift and injected carriers in the region between the two base contacts. Pulse noise measurements on FET's at liquid nitrogen temperatures reveal a white excess noise spectrum that is strongly affected by heating effects in the channel. Noise measurements of enhancement mode FET's with insulated gate were made. This noise is attributed to traps. A higher frequences the noise is practically white, but it is nonthermal. Various noise mechanisms seem to be present, and attempts are being made to sort them out. A discussion of low frequency excess noise in FET's reveals that the present theoretical results cannot fully explain the data.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 30, 1964
- Accession Number
- AD0444146
Entities
People
- A. Van Der Ziel
Organizations
- University of Minnesota