AN L-BAND TUNNEL DIODE OSCILLATOR (INCLUDING L-BAND TRANSISTOR OSCILLATOR-MULTIPLIERS).
Abstract
Gallium-Arsenide tunnel diodes having 600 ma peak current and resistive cutoff frequencies of 6 to 10 Gc were developed. The diodes were fabricated in a low inductance package permitting operation at L-band at power outputs up to 30 mw. Low impedance oscillator circuits were designed which gave power outputs of 20 to 30 mw over the required 1660 to 1700 Mc tuning range. A transistor current regulator circuit was developed which permitted operation of the oscillators with =10% supply voltage variation with a frequency change of =2 Mc or less. Modulator circuitry for frequency modulating the oscillator was developed. It was not possible, however, to meet the requirements of less than =2 Mc frequency variation over an ambient temperature range of -55 C to +75 C. Although the current regulator could be compensated to maintain nearly constant current, the change in frequency of the oscillators at constant current was so great that temperature compensation appeared to require an extensive effort. For this reason RCA suggested that the final three developmental models be transistor-oscillatormultipliers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1964
- Accession Number
- AD0464156
Entities
People
- D. E. Nelson
- E. T. Casterline
- R. Gold