A Survey of Transient Radiation-Effect Studies on Microelectronics

Abstract

In order to obtain complete up-to-date knowledge of the work accomplished and presently being done on the effects of transient nuclear radiation on microelectronics, a survey of the laboratories investigating this subject was conducted. Telephone contacts were made with specific individuals in 53 different laboratories. Data were obtained by means of questionnaires, reports, and personal visits. Abstracts of each document or other data source are included in the report. The abstracts describe the devices tested and the test environment, the type of dosimetry used, the general results obtained, and provide other relevant information. Summaries of failure levels are given in the abstracts whenever the information was readily available. A tabulated summary of the devices tested and the test conditions is presented. Failure levels observed by different investigators are compared for a few duplicated devices. Nine classified abstracts are contained in a supplement to the main report.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1965
Accession Number
AD0464309

Entities

People

  • G. W. Svetich
  • Robert S. Caldwell
  • William C. Bowman

Organizations

  • Boeing

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Circuit Analysis
  • Circuit Testers
  • Electronics Laboratories
  • Field Effect Transistors
  • Gamma Rays
  • Integrated Circuits
  • Ionizing Radiation
  • Logic
  • Logic Gates
  • Nand Gates
  • Nuclear Radiation
  • Power Electronics
  • Radiation Effects
  • Semiconductors
  • Wiring Diagrams
  • X Rays

Readers

  • Aerospace Test and Evaluation
  • Library and Information Science
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics