INVESTIGATION OF THE CHARACTERISTICS OF THE SURFACE-POTENTIAL CONTROLLED TRANSISTOR
Abstract
A surface potential controlled transistor was recently developed, the characteristics of which depend upon two semiconductor phenomena usually thought of as deleterious to transistor operation. These are carrier recombination and channel effects. The device is characterized by a high impedance grid which allows efficient operation from a low impedance source. It offers promise of replacing vacuum tubes i many applications not previously possible. The physics of operation are explained and the description of the device in terms of hybrid parameters is given. The variation of these parameters with bias conditions is investigated and explained in terms of the underlying physics. The characterization of the device as a transducer is derived in terms of gain and impedance levels.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1962
- Accession Number
- AD0480893
Entities
People
- Phillip B. Friedrichs
Organizations
- Naval Postgraduate School