INFRARED SCATTERING BY SILICON CRYSTALS

Abstract

Incoherent infrared scattering of silicon was reviewed and scattering from a crystal grown along a (110) axis was examined. It was concluded that the incoherent infrared scattering arises from regions in the crystal bounded by dislocation loops. The observed radii of cyration of the scattering regions, approximately 5 microns, agree with the size of dislocation loops which are observed using Dash's decorating technique. Analysis of the small angle scattering precludes the presence of oxide particles smaller than about 1 micron, and microscopic examination discloses no particles larger than this, indicating that there was no coalescence of oxides.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1962
Accession Number
AD0482460

Entities

People

  • David F. Wagner

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Center Of Gravity
  • Detection
  • Detectors
  • Diffraction
  • Electron Density
  • Electrons
  • Equations
  • Heat Treatment
  • Image Tubes
  • Infrared Image Tubes
  • Infrared Radiation
  • Light Scattering
  • Optical Properties
  • Particle Size
  • Scattering
  • X Rays

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology