RESEARCH, LABORATORY TESTING AND THEORETICAL STUDIES SUPPORTING AFWL TREES PROGRAM
Abstract
Hall effect semiconductor devices and titanium dioxide diodes have been found to be highly resistant to transient X-ray pulses. Transient X-ray radiation effects on air surrounding resistive elements as a function of pressure were measured and a theory developed for the effects. Continuous X-ray spectrums have been calculated from X-ray transmission data in the energy range from 180 kilovolts to 600 kilovolts and this method has proved to be satisfactory for outputs of both the flash X-ray and the DC X-ray machines in this energy range. In addition, basic radiation effects measurements were made on dielectric materials using the Hall effect and magnetoresistance measurements in a steady state gamma flux. Hall effect magnetoresistance effects were observed in polystyrene, polyethylene, and other dielectric materials. A schering Bridge method was used to determine the changes of capacitance of components during flash X-ray exposure. (This bridge is much less responsive to conductance changes than to capacitance changes.) And a Monte Carlo code has been written which describes time-dependent photon transport within finite pieces of material.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1965
- Accession Number
- AD0610759
Entities
People
- Harold Southward
- Wayne W. Grannemann
- William J. Byatt
Organizations
- University of New Mexico