Thin Films Formed by Electrochemical Reactions
Abstract
Reactively sputtered thin films of tantalum oxide deposited onto thermally oxidized silicon offer a very wide range of sheet resistivities. The application of an external d-c bias to the substrate during sputtering alters sheet resistivity with no change in film thickness. Resistors of 237 ohms/sq changed less than 3 percent after 1000 hours at +125C and 2.5 watts/sq inch. Reactively sputtered Ta2O5 dielectric films deposited onto aluminum electrodes offer capacitance values from 0.3 to 3.0 pF/sq. mil and d-c breakdown voltages of 60 to 6 volts, respectively. Yields of 64% within =20% of 0.5 pF/sq. mil and breakdown voltage greater than 18 volts have been demonstrated. Capacitors tested for 1000 hours at +125C and 60% of destructive breakdown voltage changes less than 2 percent from initial capacitance.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 28, 1965
- Accession Number
- AD0615808
Entities
People
- Coy D. Orr
Organizations
- Texas Instruments