LABORATORY TESTING AND THEORETICAL STUDIES IN TRANSIENT RADIATION EFFECTS ON MICROELECTRONICS
Abstract
A series of experimental studies was conducted on transistor elements suitable for microcircuits. A relationship of transient radiation effects to active volume and other parameters was made. The experimental and theoretical method developed offers a way of obtaining minority carrier lifetimes, depletion layer width, junction area, diffusion length, and active volume when the absorbed dose and the ionization efficiency are known in the transistor element of a microcircuit. Conversely, given the above parameters it is possible to determine the primary photocurrent of the microcircuit junction under a variety of radiation conditions. It was shown that the fundamental Boltzmann equation describing charge transport in semiconductors can be used to modify the usual continuity equation to obtain a more accurate circuit model for transistor elements in microcircuits. The oxide-isolated microcircuits were tested and compared with the usual backbiased isolation junction diode type.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1966
- Accession Number
- AD0634493
Entities
People
- Wayne W. Grannemann
Organizations
- University of New Mexico