ELECTRON IRRADIATION OF P-CHANNEL JUNCTION FETS
Abstract
The resistance of p-channel junction FETs to electron irradiation in high impedance nanoamp circuit applications is limited by the leakage current across the gate junction. The dependence of the leakage current on electron flux and total dose was investigated by electron irradiation in vacuum. The increase in leakage current was found to be primarily due to an increase in surface recombination velocity. It was independent of the electron flux over the range from 3 x 10 to the 9th power to 10 to the 12th power e/sq cm/sec with some indication of a reduction in leakage current at lower fluxes. An anomalously high leakage current due to channel formation developed in some devices at total doses above 10 to the 14th power e/sq cm.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 13, 1967
- Accession Number
- AD0651760
Entities
People
- A. G. Stanley
Organizations
- Massachusetts Institute of Technology