Optoelectronic Electron Emitter

Abstract

An improved optoelectronic cold-cathode emitter structure was developed which is grown completely by liquid-phase epitaxy. The combination of an efficient Al(1-x)GaxAs light-emitting diode and long diffusion length GaAs:Ge layer has yielded a device emitting as much as 3A/sq cm (pulsed) with an overall efficiency of 1.6% (vacuum current/diode current). Continuous operation was obtained at a current density of 0.4 A/sq cm with an efficiency of 0.43%, which was sustained for a period of 8 hr in a dynamic vacuum system.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1971
Accession Number
AD0726941

Entities

People

  • Henry Kressel
  • Herbert Nelson
  • Horst Schade

Organizations

  • Sarnoff Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Contracts
  • Current Density
  • Diodes
  • Efficiency
  • Electron Emission
  • Electronics
  • Electronics Laboratories
  • Electrons
  • Emission
  • Epitaxial Growth
  • Fabrication
  • Liquid Phases
  • New Jersey
  • Phase
  • Semiconductor Devices
  • Semiconductors
  • United States

Fields of Study

  • Materials science

Readers

  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene