Characterization of IR Windows

Abstract

Transmission and back reflection X-ray topographic analysis of Cr- doped GaAs samples have revealed several characteristic defect structures. Samples grown by the hot-wall autoclave technique contained high residual stresses resulting from growth facets, while the sample grown by liquid encapsulation appears essentially free of bulk residual stresses. In all cases, a cellular dislocation structure is evident, indicating breakdown of solidification interface stability. The crystal grown by the liquid encapsulation technique was of superior quality. The topographic analyses have not revealed a defect that correlates with the optical absorptivity of 10.6 micrometers.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1972
Accession Number
AD0746895

Entities

People

  • E. T. Peters
  • John S. Haggerty

Organizations

  • Arthur D. Little

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Cell Size
  • Cell Structure
  • Cells
  • Crystal Lattices
  • Diffraction
  • Electron Microscopy
  • Fungi
  • Microscopy
  • Photographs
  • Photography
  • Radiation
  • Residual Stress
  • Surface Properties
  • Temperature Gradients
  • Transmission Electron Microscopy
  • X Rays

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Optical Physics and Photonics.
  • Semiconductor Device Technology