Electro-Thermal Overstress Failure in Microelectronics
Abstract
Failure of microelectronic circuits caused by electrical overstress was investigated theoretically and experimentally. Computer calculations on heat flow in silicon structures pointed out the necessity of using temperature dependent thermal constants for silicon. The effect of surface layers and power distribution on the peak temperature in silicon devices under transient conditions was investigated. Integrated circuits representing several fabrication technologies from several different manufacturers were pulsed to failure over pulse lengths from 100 nsec to 10 msec. The threshold power per unit area to produce permanent damage was found to vary by a factor of 20 among the parts tested. Peak temperatures to initiate current construction were estimated to be 1000-1200C.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1973
- Accession Number
- AD0761792
Entities
People
- Henry Domingos
Organizations
- Clarkson University