Integrated Optical Circuits
Abstract
A program was initiated to develop materials and device technology in the two compound semiconductor systems In(x)Ga(1-x)As-GaAs and Hg(x)Cd(1-x)Te- CdTe which will form a base for Integrated Optical Circuits applications in the short wavelength (0.9 to 1.1 micrometers) infrared and the long wavelength (10.6 micrometers) regions, respectively. In the In(x)Ga(1-x)As-GaAs system, work has progressed toward integrating an In(x)Ga(1-x)As avalanche photodiode detector in a GaAs waveguide. In the Hg(x)Cd(1-x)Te-CdTe area an effort has been started to develop Hg(x)Cd(1-x)Te epitaxial growth techniques and waveguide, coupler, and acoustic frequency-shifter technology in CdTe. In a related program, Hg(x)Cd(1- x)Te photodiodes have been developed for heterodyne detection at 10.6 micrometers with a frequency cutoff of near 800 MHz and quantum efficiencies greater than 40 percent.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 31, 1973
- Accession Number
- AD0769858
Entities
People
- Charles M. Wolfe
- David L. Spears
- Gregory E. Stillman
- Ivars Melngailis
Organizations
- Massachusetts Institute of Technology