IR Window Studies

Abstract

Continuing wavelength dependent absorption measurements of 'high purity' GaAs grown from the melt by a variety of techniques show remarkably similar structure in all samples. Preliminary measurements of the dielectric constant of GaAs have been obtained. A systematic study of diffuse intensity streaks in the electron diffraction pattern of GaAs single crystals indicates that they are of thermal origin, and do not arise from inclusions or impurities. The absorption coefficient of a good quality sample of GaAs has been reduced to that of best quality samples by annealing. Experiments on self diffusion of Cd and Te, and high temperature Hall effect in CdTe and In-doped CdTe have been completed. (Modified author abstract)

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Document Details

Document Type
Technical Report
Publication Date
Jun 15, 1973
Accession Number
AD0770009

Entities

People

  • Ferdinand Kroger
  • John H. Marburger

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Air Force
  • Chemical Vapor Deposition
  • Crystals
  • Diffraction
  • Electrons
  • High Temperature
  • Materials
  • Materials Processing
  • Materials Science
  • Measurement
  • Piezoelectric Crystals
  • Single Crystals
  • Surface Acoustic Waves
  • Surface Waves
  • Transducers

Fields of Study

  • Materials science

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene