Reliability of High Field Semiconductor Devices

Abstract

The report describes the results of a program of investigation concerning the reliability and failure modes of gallium arsenide Gunn and IMPATT diodes. Data is presented concerning the burn-out distribution in time of Gunn diodes. Also, the changes in dc and RF parameters of 700 Gunn and 100 gallium arsenide IMPATT diodes resulting from 24 to 168 hours of dc high temperature burn-in are present. The results of long-term RF burn-in experiments are presented. Optical and electron microscope photographs are presented which are used in the analysis of the manufacturing defects leading to early failure in Gunn diodes. Correction of these defects has lead to an increased 24-hour burn-in yield.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1974
Accession Number
AD0781572

Entities

People

  • J. L. Heaton
  • T. B. Ramachandran

Organizations

  • M/A-COM Technology Solutions

Tags

Communities of Interest

  • Advanced Electronics
  • Electronic Warfare
  • Energy and Power Technologies
  • Ground and Sea Platforms
  • Weapons Technologies

DTIC Thesaurus Topics

  • Accuracy
  • Electron Microscopes
  • Energy
  • Failure Mode And Effect Analysis
  • Frequency
  • Gunn Diodes
  • High Temperature
  • Life Tests
  • Massachusetts
  • Measurement
  • Metal-Semiconductor Junctions
  • Military Research
  • Scanning Electron Microscopes
  • Semiconductor Devices
  • Semiconductors
  • Test And Evaluation
  • United States

Fields of Study

  • Engineering

Readers

  • Integrated Circuit Design and Technology.
  • Structural Health Monitoring of Composite Structures.
  • ballistics.

Technology Areas

  • Microelectronics