Handbook for Predicting Semiconductor Device Performance in Neutron Radiation
Abstract
Procedures are presented for predicting transistor and diode electrical performance after permanent damage from neutron radiation. The prediction techniques are illustrated with examples of step-by-step calculations to facilitate use by circuit designers familiar with semiconductor device operation but not familiar with radiation damage effects in the devices. The handbook contains predictions of transistor current gain, saturation voltage, forward voltage, breakdown voltage, leakage current and switching time, forward voltage of power diodes, and transistor current gain in microelectronic configurations. Measurements of important physical device parameters needed in the prediction equations are described in detail. Also described is a procedure for measuring radiation test exposure in Radiation Damage Units (RDU) by using transistor Radiation Damage Monitors (RDMs).
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1967
- Accession Number
- AD0818971
Entities
People
- Allen E. Mccardell
- Carl D. Taulbee
- Max Frank
- Rudolf Six