Modeling and Simulation of a Gallium Nitride (GaN) Betavoltaic Energy Converter
Abstract
Gallium nitride (GaN) semiconductor devices have the potential to improve the efficiency of direct energy conversion and indirect energy conversion isotope batteries, making available long-lived power sources. However, knowledge of the details of electron transport when GaN is exposed to higher-energy electrons typical of beta emission by tritium is needed. A model of a GaN betavoltaic device was simulated using Silvaco ATLAS device simulation software. Numerical calculations are compared to experimental results obtained from prior experimental parameter studies of a GaN P-u-N diode. The device efficiency and maximum power point with respect to different energy electron beams of the experiment and simulation are then compared to verify the model. The simulation results match with the results of the measured betavoltaic device. The GaN simulation model developed can be used to verify the fundamental material characteristics of the as-grown GaN, understand the design challenges, and optimize the efficiency of the betavoltaic process in different GaN device structures offering higher-energy-conversion efficiency than 2-dimensional geometries.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2016
- Accession Number
- AD1011523
Entities
People
- Johnny A. Russo
- Marc S. Litz
- William Ii B. Ray
Organizations
- United States Army Research Laboratory