Broadband 1.2- and 2.4-mm Gallium Nitride (GaN) Power Amplifier Designs

Abstract

The US Army Research Laboratory is exploring devices and circuits for radio frequency communications, networking, and sensor systems of interest to Department of Defense applications, particularly for next-generation radar systems. Broadband, efficient, high-power monolithic microwave integrated circuit amplifiers are extremely important in any system that must operate reliably and efficiently in continually crowded spectrums, with multiple purposes for communications, networking, and radar. This report describes the design of a broadband Class A/B power amplifier using Raytheon's high-frequency, efficient, gallium nitride on 4-mil silicon carbide process. While this design was not part of the initial wafer fabrication for the original effort, it could be finalized and fabricated at a future date.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 2017
Accession Number
AD1040062

Entities

People

  • John E. Penn

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Bandwidth
  • Broadband
  • Circuits
  • Compound Semiconductors
  • Computer-Aided Design
  • Elements
  • Fabrication
  • Frequency
  • Gallium Nitrides
  • Integrated Circuits
  • Microwave Integrated Circuits
  • Military Research
  • Monolithic Microwave Integrated Circuits
  • Power Amplifiers
  • Radar
  • Radio Frequency

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Software Engineering

Technology Areas

  • Microelectronics