A 205GHz Amplifier in 90nm CMOS Technology

Abstract

This paper presents a 205GHz amplifier drawing 43.4mA from a 0.9V power supply with 10.5dB power gain, P(sat) of -1.6dBm, and P(1dB) approximately -5.8dBm in a standard 90nm CMOS process. Moreover, the design employs internal (layout-based) /external (using passive embedding around the transistor) neutralization techniques for improving performance and yield of the overall system while canceling the effect of internal parasitic capacitors. The fabricated amplifier has the highest operation frequency among all reported amplifiers in 90nm and greater CMOS technologies.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2017
Accession Number
AD1042244

Entities

People

  • Shahab Ardalan

Organizations

  • San José State University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Amplifiers
  • Bandwidth
  • Data Rate
  • Diagnostic Imaging
  • Energy Consumption
  • Figure Of Merit
  • Frequency
  • Gain
  • Measurement
  • Millimeter Waves
  • Neutralization
  • Power Gain
  • Power Measurement
  • Power Meters
  • Power Supplies
  • Transistors
  • Transmission Lines

Fields of Study

  • Engineering
  • Physics

Readers

  • Acoustics.
  • Electronics Engineering
  • Integrated Circuit Design and Technology.