Dopantless Diodes for Efficient Mid/deep UV LEDs and Lasers - Topic 4.2 Optoelectronics
Abstract
We developed a new type of pn-diode not requiring impurity doping, polarization-induced nanowire LEDs (PINLEDs) containing zero dislocations, and exhibiting hole conductivity in AlGaN without acceptor doping. Building on our development of PINLEDs, the goal of this 3 year project was to study the fundamental optical and electronic processes in PINLEDs to understand the limits of efficiency in deep UV optoelectronics based on AlGaNin the absence of dislocations and ionized impurity dopants. To study the effect of strain and confinement energy on optical properties, AlGaN and InGaN quantum disks with compositions across the entire alloy ranges were to be developed taking advantage of strain accommodation in nanowires enabling exploration of quantum disks active regions with unusually large confinement. The limits of polarization-induced conductivity were to be tested by steepening the compositional grade to boost polarization charge, as well as by examining how passivation or modulation doping affects diode conductivity. Besides ensemble measurements, individual PINLEDs were to be electrically probed using scanning conductance probe microscopy (SCPM).
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 12, 2017
- Accession Number
- AD1050757
Entities
People
- Roberto C. Myers
Organizations
- Ohio State University