Silicon-Based Examination of Gamma-Ray and Neutron Interactions with Solid State Materials
Abstract
The objective of the research was to develop a fundamental understanding of the processes by which charge carriers interact in semiconductor materials in order to aid in the development of advanced radiation detection materials. During the first three years of the research, our focus was primarily on silicon, using a relatively well-behaved semiconductor as a material basis from which we can understand those physical principles that can impair the contact behavior and affect the charge transport. That information has been applied to single-crystal cadmium-zinc-telluride (CZT) and lead chalcogenide (PbS, PbSe, PbTe) nanocrystalline solids, with particular focus on the nanostructured materials during the latter two Phases of the work. During the research, we endeavored to develop general techniques by which charge creation is maximized and impediments to its transit are minimized, and to apply those techniques to the most favorable material systems.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 02, 2018
- Accession Number
- AD1051113
Entities
People
- Mark D. Hammig
Organizations
- University of Michigan