Fabrication of Graphene-on-GaN Vertical Transistors

Abstract

The recently discovered two-dimensional materials opened up a new era of physics and applications in the field of electronics. Various exciting and promising applications of this materials have been demonstrated already in the conventional electronic structures which is based on the principle of in plane transport. The goal of this thesis to explore the physics and application of the out of plane transport of two dimensional materials specifically graphene to study the underlying physics and future technological applications.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2014
Accession Number
AD1074929

Entities

People

  • Ahmad Zubair

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • 5G Wireless Networks
  • Band Gaps
  • Chemical Vapor Deposition
  • Computer Science
  • Crystal Structure
  • Crystals
  • Electrical Engineering
  • Electron Mobility
  • Energy Bands
  • Field Effect Transistors
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Materials
  • Materials Processing
  • Materials Science
  • Materials Testing
  • Metal-Semiconductor Junctions
  • Microscopes
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Transport Properties
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Military History / Militaries and War Studies
  • Nanoscale Plasmonic Nanotechnology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene