Terahertz Nitride Sources (TNS)
Abstract
The Hot Electron Transistor (HET) is one of the most promising electron devices to achieve power generation beyond the operating frequencies of state-of-the-art high electron mobility transistors (HEMTs) and bipolar transistors. In an HET, ultra-thin base electrodes enable ultra-short transit time with the potential to achieve THz operation. Graphene, the thinnest known conductive membrane, has a great potential as the base material in HETs. At the same time, GaN has already been established as the best material for high frequency amplification due to its wide bandgap, excellent transport properties and high breakdown field. The main objective of the Terahertz Nitride Source (TNS) project is to study the transport physics and opportunities of graphene/GaN hot electron transistors in potential THz electronic applications. In addition, the project has also produced important advances is materials synthesis and characterization, as well as numerous other device structures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 2018
- Accession Number
- AD1074958
Entities
People
- Tomás Palacios
Organizations
- Massachusetts Institute of Technology