Direct Measurement Structure of SRAM SNM

Abstract

Static noise margin (SNM) is a major parameter of a Static Random Access Memory (SRAM) cell. Current approaches measure SNM indirectly or through probe points. This paper provides an approach to have flexible and direct access to the internal nodes of SRAM cells. It is possible to measure the SNM of a large number of SRAM cells quickly with a simple test setup, due to the controllability and visibility of the SRAM internal nodes. Therefore this approach can be used to characterize SRAM SNM in reliability stresses and radiation tests. Simulation proves that the error introduced in this approach is less than 5%.

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Document Details

Document Type
Technical Report
Publication Date
Mar 25, 2019
Accession Number
AD1075360

Entities

People

  • Ethan H. Cannon
  • Manuel F. Cabanas-holmen
  • Mark Yao

Organizations

  • Boeing

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Accelerated Testing
  • Cells
  • Decoding
  • Environment
  • Extreme Environments
  • High Density
  • Inverters
  • Lepidoptera
  • Measurement
  • Power Supplies
  • Radiation
  • Reliability
  • Resistance
  • Simulations
  • Transistors

Readers

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  • Computational Modeling and Simulation
  • Spectroscopy.