A Radiation-Tolerant D Flip-Flop Designed for Low-Voltage Applications

Abstract

A radiation-hardened by design RHBD D flip-flop DFF is presented that demonstrates a tolerance to radiation induced single-event upsets (SEUs), while maintaining desirable electrical performance characteristics over a wide range of supply voltages. The flip-flop is based on the unhardened Static Single-phased Contention Free Flip-Flop S2CFF and maintains all three characteristics of being static, single-phased, and contention free for robustness in low voltage operation. The radiation robustness and electrical performance of the new RHBD D flip-flop design is then compared to the unhardened S2CFF, and an RHBD DICE FF design.

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Document Details

Document Type
Technical Report
Publication Date
Mar 25, 2019
Accession Number
AD1075365

Entities

People

  • Bharat L. Bhuva
  • Dennis R. Ball
  • Grant D. Poe
  • J. S. Kauppila
  • L. W. Massengill
  • Timothy D. Haeffner

Organizations

  • Vanderbilt University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Capacitance
  • Computer Science
  • Electrical Engineering
  • Energy Consumption
  • Engineering
  • Hardening
  • Hardness
  • Logic Elements
  • Low Voltage
  • Radiation
  • Reliability
  • Simulations
  • Standards
  • Transistors
  • Voltage
  • Vulnerability

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.