GaN-Based FETs with Laterally-Gated Multi-2DEG Channels for High Power and Linearity

Abstract

We report on a new type of GaN-based field effect transistors with laterally-gated multiple 2DEG channels, called BRIDGE FET (buried dual gate FET). Unique operation principle of the proposed transistor demonstrated unprecedented device characteristics suitable for efficient and linear millimeter wave power amplifier applications. Multiple 2DEG channels formed in AlGaN/GaN and AlN/GaN material systems are compatible with the BRIDE FET structure, adding design flexibility for an increased drain current density with higher frequency performance. Finally, hexagonal micro-scale device cells consisting of segmented BRIDGE FETs construct a power amplifier (PA) unit cell, where distributing heat sources uniformly over an entire PA cell area maximizes its area power

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Document Details

Document Type
Technical Report
Publication Date
Mar 25, 2019
Accession Number
AD1075401

Entities

People

  • Andrea Arias
  • Andrew D. Carter
  • Berinder Brar
  • Casey King
  • Debdeep Jena
  • Eric J. Regan
  • Huili G. Xing
  • Joshua Bergman
  • K. Shinohara
  • Kazuki Nomoto
  • Miguel Urteaga
  • Moududul Islam
  • Reet Chaudhuri
  • Ryan Page

Organizations

  • Teledyne Technologies

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • 5G Wireless Networks
  • Amplifiers
  • Capacitance
  • Department Of Defense
  • Electric Fields
  • Electrical Properties
  • Electron Density
  • Electron Mobility
  • Electronic Mail
  • Electrons
  • Field Effect Transistors
  • Linearity
  • Metal-Semiconductor Junctions
  • Power Amplifiers
  • Transistors

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • 5G