Ultra-Wide-Bandgap Aluminum Gallium Nitride Devices for Radio-Frequency Applications

Abstract

The motivation for the use of ultra-wide-bandgap, Al-rich AlGaN for radio-frequency high electron mobility transistors is presented. An 8 increase in RF power is expected based on the anticipated 4 increase in breakdown electric field, 2 increase in channel sheet carrier density, and parity in electron saturation velocity for Al-rich AlGaN compared to GaN. Numerical simulations of HEMTs based on Al-rich AlGaN/AlGaN heterostructures indicate that a power density approaching 20 W/mm may be possible. Initial experimental results on an Al0.85Ga0.15N/Al0.70Ga0.30N HEMT demonstrate the viability of the technology.

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Document Details

Document Type
Technical Report
Publication Date
Mar 25, 2019
Accession Number
AD1075620

Entities

People

  • Albert G. Baca
  • Andrew A. Allerman
  • Andrew M. Armstong
  • Brianna Klein
  • Christopher Nordquist
  • E Douglas
  • Jack D. Flicker
  • Joel R. Wendt
  • Robert Kaplar
  • Shahad Reza
  • Stefan M. Lepkowski

Organizations

  • Sandia National Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • 5G Wireless Networks
  • Amplifiers
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Current Density
  • Electric Fields
  • Electron Mobility
  • Electrons
  • Frequency
  • Gallium Nitrides
  • Heterojunctions
  • High Electron Mobility Transistors
  • High Temperature
  • Materials
  • Radio Frequency
  • Radio Frequency Devices
  • Radio Frequency Power

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics