Low-Noise Amplifiers (LNAs) and Power Amplifiers (PAs) for Next-Generation S and X-Band Radars

Abstract

The US Army Combat Capabilities Development Command Army Research Laboratory (CCDC ARL) has been evaluating and designing efficient broadband high-power amplifiers for future adaptive multimode radar systems in addition to other circuits for use in communications, networking, and electronic warfare (EW). ARL submitted designs of broadband amplifiers, power amplifiers, high-dynamic range low-noise amplifiers, high-power switches, frequency multipliers, and other circuits for future radar, communications, EW, and sensor systems using Qorvos high-performance 0.15-m gallium nitride (GaN) fabrication process. This technical note briefly summarizes several designs using Qorvos 0.15-m high-power, efficient GaN on 4-mil silicon carbide process that were submitted to an ARL prototype wafer option fabrication.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2020
Accession Number
AD1089191

Entities

People

  • John E. Penn

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Electronic Warfare
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Bandwidth
  • Broadband
  • Compound Semiconductors
  • Distributed Amplifiers
  • Electronic Warfare
  • Electronics Laboratories
  • Elements
  • Frequency
  • High Electron Mobility Transistors
  • Low Noise
  • Low Noise Amplifiers
  • Military Research
  • Monolithic Microwave Integrated Circuits
  • Power Amplifiers
  • Radar
  • Semiconductors
  • X Band

Readers

  • Electronics Engineering
  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics