Sample Preparation Methods for Diamond-Silicon-Carbide Microstructure Analysis
Abstract
Microstructural characterization of diamond-containing ceramic composites, like diamond silicon carbide (SiC), requires advanced sample preparation methods. Tradition mechanical polishing methods cannot be used due to the addition of diamond particles. Instead, techniques like the scaife process for diamond knife polishing, ion polishing, or laser polishing must be used. In this report a diamond SiC composite, polished using these three methods is characterized using scanning electron microscopy (SEM), Raman spectroscopy, and electron backscatter diffraction (EBSD). This report shows which polishing methods are sufficient to acquire data for each characterization technique. While the scaife process is the best method for polishing diamond SiC, all characterization techniques are feasible over a large area. Ion polishing is also capable of polishing this material well enough for each characterization technique, but only over small areas. Laser polishing is sufficient enough for SEM and Raman but too textured for accurate EBSD.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 14, 2020
- Accession Number
- AD1089732
Entities
People
- Anthony Digiovanni
- Jonathan P. Ligda
- Taylor Shoulders
Organizations
- United States Army Research Laboratory