32NM HAFNIUM (IV) DIOXIDE (HFO2) NEGATIVE METAL OXIDE SEMICONDUCTOR (NMOS) ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORIES (EEPROMS) FOR OPEN SYSTEMS COMPUTER APPLIANCES

Abstract

The research objectives of this work are improvements to stress arrays of low threshold HfO2/SiOx N-CMOS architectures. Many of these designs are currently employed in advanced computer architectures that have secure capabilities for the Air Force Research Laboratory (AFRL) in Rome, NY. This will be accomplished by creating a complete design flow integration with commercial and open-source Electronic Design Automation (EDA) tools. Designs will then be formalized as EEPROM bank cell intellectual property. The acceleration parameter is then combined with time dependent breakdown models resulting in device lifetime models for both write and ease as a function of applied gate voltage. This results in write and erase protocols as a function. Results demonstrate successful research that utilizes the CMOS SOI32 EEPROM test structures submitted with USAFAFMC AFRL/RITA to develop Stochastic based write-erase models and other yield-associated results.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 2020
Accession Number
AD1092382

Entities

People

  • Chris Hutchens

Organizations

  • Oklahoma State University–Stillwater

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Central Processing Units
  • Circuit Boards
  • Complementary Metal-Oxide Semiconductors
  • Computer Programming
  • Computers
  • Computing System Architectures
  • Conduction Bands
  • Energy Bands
  • Intellectual Property
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Military Research
  • Operating Systems
  • Semiconductors
  • Three Dimensional

Fields of Study

  • Engineering

Readers

  • Integrated Circuit Design and Technology.

Technology Areas

  • Microelectronics