GeSn Based Near and Mid Infrared Heterostructure Detectors 2

Abstract

This final report presents results obtained and progress made during September 20th, 2017 to March 19, 2019. This project is a part of the greater effort for the development of Si photonics that broadens the reach of Si material and technology beyond electronics. The focus of the project is the development of photonic devices based on the group-IV alloys, SiGeSn and/or GeSn that can be integrated with the CMOS Si technology. In this project, we have made progress on three fronts. One is on the GeSn quantum structures that can benefit a range of photonic devices. The second is on light emitting diodes whose emission can be in-plane coupled into group-IV waveguides and subsequently be detected by GeSn based waveguide detectors. The third includes the demonstration of GeSn based vertical light emitters and optically pumped lasers. This report highlights the main achievements in these three areas.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
May 07, 2019
Accession Number
AD1096512

Entities

People

  • Greg Sun

Organizations

  • University of Massachusetts Boston

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Band Structures
  • Conduction Bands
  • Detectors
  • Electronics Industry
  • Electronics Laboratories
  • Emission Spectra
  • Energy Bands
  • Heterojunctions
  • Lasers
  • Light Sources
  • Optics
  • Photonics
  • Power Electronics
  • Quantum Wells
  • Refractive Index
  • Semiconductors

Fields of Study

  • Materials science
  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing