Reconfigurable, High-Frequency Circuit Components using Phase Change Materials
Abstract
Germanium telluride (GeTe) phase-changing material (PCM) was grown for the first time using a pulsed electron deposition (PED) tool. This includes: the demonstration of various film thicknesses, the determination of GeTe growth conditions, the characterization of GeTe growth rates, and an investigation of the deposited film quality. The detailed study on the growth of GeTe using PED was published in a journal. Second paper in preparation with details on activation of PED-grown GeTe. Switches and tunable filters have been designed using GeTe PCM. This work will continue through the year and further publications are expected.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 26, 2019
- Accession Number
- AD1096529
Entities
People
- Hjalti H. Sigmarsson
Organizations
- University of Oklahoma