Modulation-Doped Heterovalent Structures for High-Speed Electronic Device Applications

Abstract

Optimized conditions for growing III-V, II-VI, and IV-VI materials in a single chamber were investigated, including experimenting withdifferent growth modes, substrate temperatures, flux ratios, and interface termination.

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Document Details

Document Type
Technical Report
Publication Date
Aug 14, 2019
Accession Number
AD1096596

Entities

People

  • David R. Smith
  • Yong-hang Zhang

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Compound Semiconductors
  • Crystal Structure
  • Crystals
  • Electron Microscopy
  • Energy Bands
  • Epitaxial Growth
  • Heterojunctions
  • Materials
  • Measurement
  • Microscopy
  • Optical Properties
  • Optics
  • Optoelectronics
  • Quantum Efficiency
  • Semiconductor Devices
  • Semiconductors

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene