Growth and Characterization of SiGeSn Using Ultra-High-Vacuum Plasma-Enhanced Chemical Vapor Deposition Technique for Silicon Based Mid- infrared Laser and Detector Applications
Abstract
The research activities during the project period was focused on the following directions: 1- Growth of (Si)GeSn materials grown via UHV-CVD and RP-CVD; 2- Characterization of (Si)GeSn materials using PL, Raman, Ellipsometry, XRD, TEM, SIMS, to investigate Si and Sn composition, lattice constants, strain, relaxation, crystallinity, and epitaxial film quality; 3- Systematic study of GeSn/GeSn/GeSn and SiGeSn/GeSn/SiGeSn QW structures with Ge and GeSn buffer layers to achieve direct bandgap type-I band alignment GeSn QW for photonics applications; 4-Design, fabrication, and characterization of GeSn lasers and photodetectors for mid-infrared photonics and optoelectronics
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 03, 2019
- Accession Number
- AD1096687
Entities
People
- Mansour Mortazavi
- Shui-Qing Yu
Organizations
- University of Arkansas System