Radiation Effects in III-V MOSFETs for sub-10 nm CMOS
Abstract
This is the final report of a research program that studied radiation effects in InGaAs- and InGaSb-based MOSFETs for future CMOS technology insertion and to investigate appropriate parametric sensitivity that will be useful in the event that mitigation strategies are required in the future. The goal was to develop basic understanding of the physical phenomena involved by building appropriately tailored test structures and devices and testing them under a variety of radiation conditions that include X-rays, protons, heavy ions, and alpha particles. Emphasis was given to dielectrics and semiconductor structures and geometries of relevance to sub-10 nm CMOS nodes, namely Tri-gate designs.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 20, 2020
- Accession Number
- AD1097669
Entities
People
- Jesús A. del Alamo
- Ronald D. Schrimpf
Organizations
- Massachusetts Institute of Technology