Characterization of Reactive Ion Etch Chemistries Using Direct Write Lithography
Abstract
The DoD requires a variety of COTS and number of custom microelectronics to provide important functionality to critical military systems. Photo-lithography and DRIE are two techniques commonly used in the development of deep anisotropic features for the fabrication and modification of microelectronics and MEMS. However, standard photo-lithography techniques are ineffective for unique substrate geometries and DRIE processes require a chemical passivation step only applicable to Si substrates. This work confirmed the capability of RIE using DWL to perform deep, highly selective, an isotropic etching on elevated, non-circular substrates.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 06, 2020
- Accession Number
- AD1103218
Entities
People
- Dylan T. Martin-abood
Organizations
- Air Force Institute of Technology