Gallium Nitride (GaN) RF Challenge: Broadband Power Amplifiers in BAE 0.18-m GaN Technology

Abstract

The DOD Gallium Nitride (GaN) RF Challenge is enabling development and fabrication of the best concepts for high-performance efficient broadband Monolithic Microwave Integrated Circuits related to 5G expansion and critical electronic warfare needs. The circuits documented in this report represent some of the US Army Combat Capabilities Development Command Army Research Laboratory's designs as part of the DOD Design Team for BAE Systems 0.18-m GaN multiproject wafer fabrication. When these fabricated designs are returned in 2021, they will be tested, evaluated, and documented in future technical reports.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 2021
Accession Number
AD1123199

Entities

People

  • John E. Penn

Organizations

  • United States Army

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • 5G Wireless Networks
  • Amplifiers
  • Bandwidth
  • Broadband
  • Circuits
  • Compound Semiconductors
  • Department Of Defense
  • Distributed Amplifiers
  • Electronic Warfare
  • Elements
  • Fabrication
  • Feedback Amplifiers
  • Field Effect Transistors
  • Frequency
  • Gallium Nitrides
  • Integrated Circuits
  • Ka Band
  • Microwave Integrated Circuits
  • Military Research
  • Monolithic Microwave Integrated Circuits
  • Power Amplifiers
  • Warfare
  • Wireless Networks

Readers

  • Defense Technology Research and Development.
  • Microwave Engineering.
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • 5G
  • Microelectronics