Ultra-Wide Bandgap Semiconductors Workshop III
Abstract
With their very large energy gaps and associated larger critical electric fields and greater bond strengths, ultra-wide bandgap (UWBG) semiconductors have the potential to handle more power and operate further into the deep UV, better at higher temperatures, and better in corrosive environments. However, various challenges, often unique to the individual UWBG semiconductor, have to be overcome for that semiconductor to reach its potential. For example, beta-phase gallium oxide (beta-Ga2O3) has a small thermal conductivity, aluminum gallium nitride (AlGaN) is lattice mismatched with the substrate it grows on, and diamond has only deep donors and acceptors. The recent progress made on these and other challenges are discussed along with the dielectric, magnetic, and thermal materials that will also be required for these semiconductors to reach their full potential.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2021
- Accession Number
- AD1138076
Entities
People
- Aivars J. Lelis
- D. Pavlidis
- Hongping Zhao
- K. Goretta
- K.W. Jones
- M.A. Hollis
- Nathan G. Johnson
- Robert Kaplar
- Tony Ivanov
Organizations
- United States Army