High Voltage Vertical GAN Diodes for Shipboard Power Conversion
Abstract
A major objective of the Naval Power and Energy Systems Technology Development Roadmap is to develop efficient power distribution architectures for improved power handling on U.S. warships, enabling new capabilities requiring high power consumption. Wide bandgap semiconductor technology will help enable this goal. In particular, GaN MOSFET devices can theoretically handle 20 kV; however, this technology is difficult to realize since GaN substrate technology is still immature. This project used long-range, non-destructive optical techniques to study the defects and determine which ones would cause device failure with the aim of helping manufacturers produce vertical device suitable for commercial use. It discovered that Raman spectroscopy and optical profilometry are effective tools for this application.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 03, 2021
- Accession Number
- AD1145251
Entities
People
- James C. Gallagher
Organizations
- United States Naval Research Laboratory