Gallium Nitride (GAN) RF Challenge; BAE Design Testing

Abstract

The U.S. Department of Defense (DOD) Gallium Nitride (GAN) RF Challenge is enabling development and fabrication of the best concepts for high-performance, efficient, broadband monolithic microwave integrated circuits (MMICs) related to the 5G expansion and to critical electronic warfare needs. The circuits documented in this report represent some of the US Combat Capabilities Development Command Army Research Laboratory designs as part of the DOD Design Team for the BAE Systems 0.18-micrometer GAN multi-project wafer fabrication. When these fabricated designs are returned in 2021, they will be tested, evaluated, and documented in future technical reports.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2021
Accession Number
AD1148108

Entities

People

  • Ali Darwish
  • John Penn
  • Khamsouk Kingkeo
  • Sami Hawasli

Organizations

  • United States Army

Tags

Communities of Interest

  • Electronic Warfare
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • 5G Wireless Networks
  • Amplifiers
  • Bandwidth
  • Broadband
  • Circuits
  • Compound Semiconductors
  • Department Of Defense
  • Electronic Warfare
  • Fabrication
  • Frequency
  • Gallium Nitrides
  • Integrated Circuits
  • Measurement
  • Microwave Integrated Circuits
  • Military Research
  • Monolithic Microwave Integrated Circuits
  • Power Amplifiers
  • Radio Frequency
  • Semiconductors
  • Signal Generators
  • Warfare
  • Wireless Communications
  • Wireless Networks

Readers

  • Electronics Engineering
  • Research Science/Academic Research
  • Unmanned Aerial System (UAS) Autonomous Capabilities and Mission Reconnaissance.

Technology Areas

  • 5G
  • Microelectronics