Thermal Mechanical Investigation of Ultra Wide Bandgap Materials and Devices
Abstract
Research and development of ultra-wide bandgap (UWBG) semiconductor devices are underway to realize next-generation military power conversion and wireless communication systems. Devices based on Beta-phase gallium oxide (Beta-Ga2O3), aluminum gallium nitride (AlxGa1-xN, x is the Al composition), and diamond give promise to the development of power switching devices and radio frequency (RF) power amplifiers with higher performance and efficiency than todays commercial wide bandgap semiconductor devices based on gallium nitride (GaN) and silicon carbide (SiC). However, one of the most critical challenges for the successful deployment of UWBG device technologies is to overcome adverse thermal effects that impact the device performance and reliability. Overheating of UWBG devices originates from the targeted high power density operation and the poor intrinsic thermal properties of AlxGa1-xN and Beta-Ga2O3. This report delineates the need and process for the electro-thermal co-design of UWBG electronic devices. Device electro-thermal modeling and thermal characterization techniques developed in this work are reviewed. In addition, early efforts on the design of device-level thermal management solutions are reported.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 26, 2021
- Accession Number
- AD1152455
Entities
People
- Sukwon Choi
Organizations
- Pennsylvania State University