Study of Growth Mechanism and Planar Defect Formation in Beta-(AlxGa1-x)2O3/Ga2O3 Heterostructures Grown by MOVPE on Differently Oriented Beta-Ga2O3 Substrates
Abstract
Ga2O3 has a high potential to be used as material for high power switching devices. In this work the growth of homoepitaxial x2;x15;-Ga2O3 layers by metal-organic vapor phase epitaxy (MOVPE) on (010) and (100) oriented substrates has been investigated. For deviceapplications like MOSFETs, the interface properties between layers with different doping concentrations are crucial. Therefore, the deposition of modulation Si-doped layer structures, the investigation of interface properties and the study of the influence of substrate orientation are the main goals of this work. The substrate interface layer, as well as the interfaces between layers with different doping levels play an important role for the device performance. Si depth profiles measured by SIMS revealed a gradual junction between layers with different doping regimes for multilayers grown on (010) substrates, while multilayer grown on (100) 6 off oriented wafers show sharp interfaces. Using of (100) oriented substrates may reduce the leakage current and improve the device performance, pointing out at the same time a direction for device development.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 14, 2021
- Accession Number
- AD1153813
Entities
People
- Andreas Popp
Organizations
- Forschungsverbund Berlin