Understanding Interfaces for Homoepitaxial GaN Growth

Abstract

The recent availability of commercial bulk GaN substrates enables vertical GaN devices to become a reality through homoepitaxial growth. However, additional materials challenges need to be understood and surmounted to fully develop the technology. The first step to this is forming an understanding of the influences of the interface on growth and device performance. This chapter will examine the effects of surface preparation and initiation on growth morphology, impurity incorporation, interface composition, as well as how these issues affect device performance.

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Document Details

Document Type
Technical Report
Publication Date
Oct 15, 2020
Accession Number
AD1165380

Entities

People

  • Jennifer K Hite
  • Michael A. Mastro

Organizations

  • United States Naval Research Laboratory

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Crystal Growth
  • Crystals
  • Electrical Properties
  • Electron Mobility
  • Electronics Laboratories
  • Epitaxial Growth
  • Films
  • Geometry
  • High Electron Mobility Transistors
  • Materials
  • Optical Properties
  • P-N Junction Diodes
  • Physical Properties
  • Quantum Wells
  • Semiconductors
  • Silicon Carbide
  • Surface Roughness
  • Thermal Conductivity

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design