Design of a Battery-Powered Gate Driver for Medium-Voltage Silicon Carbide Switch Modules in Pulsed Applications

Abstract

A compact battery-powered gate driver was designed to enable a wide range of switching modes for a series-connected, medium-voltage, silicon carbide metal oxide semiconductor field-effect transistor or insulated-gate bipolar transistor in pulsed applications. The gate drivers battery power source eliminates the need to isolate power from a supply referenced to a fixed potential. To prolong the gate drivers shelf life, the circuit is designed to be disabled in a low-power state by default. The gate driver is designed to have a relatively thin profile to provide voltage standoff between neighboring series-connected switches. Features include a wide range of configurable gate currents, an asymmetric turn-on/turn-off gate-resistance network, voltage clamps for gate protection, and a Miller clamp to reduce transient-induced gate-voltage excursion while in the off state.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 2022
Accession Number
AD1176133

Entities

People

  • Damian Urciuoli
  • Miguel Hinojosa

Organizations

  • United States Army

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Bipolar Junction Transistors
  • Carbides
  • Compound Semiconductors
  • Electronics Laboratories
  • Elements
  • Field Effect Transistors
  • High Voltage
  • Military Research
  • Semiconductor Devices
  • Semiconductors
  • Shelf Life
  • Silicon
  • Silicon Carbide
  • Transistors
  • Voltage

Readers

  • Electrical Engineering
  • Integrated Circuit Design and Technology.

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems