Negative Capacitance Enabled Scaling to Achieve 1 THz Cut-Off Frequency Transistors on a CMOS Platform

Abstract

Investigate the use of very completely new physical concept, namely utilizing negative capacitance in a ferroelectric oxide to boost Cox by using the ferroelectric oxide as a gate insulator in advanced transistors. This necessitated not only obtaining the desired physical effect but also material discovery and optimization to integrate with Si transistors.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 2022
Accession Number
AD1177127

Entities

People

  • Saveef Salahuddin
  • Suman Datta

Organizations

  • University of California

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Air Force Research Laboratories
  • Capacitance
  • Complementary Metal-Oxide Semiconductors
  • Dielectrics
  • Electron Microscopy
  • Field Effect Transistors
  • Films
  • Frequency
  • Governments
  • Intellectual Property
  • Materials
  • Metal Oxide Semiconductors
  • Military Research
  • Platforms
  • Semiconductors
  • Simulations
  • Solid Solutions
  • Standards
  • Transistors
  • Transmission Electron Microscopy

Readers

  • Integrated Circuit Design and Technology.
  • Microwave Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics